Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

---

Infineon Technologies IRGR4610DTRLPBF

IGBT 600V 16A 77W DPAK

0

Infineon Technologies IRGR4610DPBF

IGBT 600V 16A 77W DPAK

0

Infineon Technologies IRGR4607DTRRPBF

IGBT 600V 11A 58W DPAK

0

Infineon Technologies IRGR4607DTRLPBF

IGBT 600V 11A 58W DPAK

0

Infineon Technologies IRGR4607DPBF

IGBT 600V 11A 58W DPAK

0

Infineon Technologies IRGP4640PBF

IGBT 600V 65A 250W TO247AC

0

Infineon Technologies IRGP4620DPBF

IGBT 600V 32A 140W TO247AC

0

Infineon Technologies IRGP4620D-EPBF

IGBT 600V 32A 140W TO247AD

0