Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IRGP4069-EPBF

IGBT 600V 76A 268W TO247

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Infineon Technologies IRGB4615DPBF

IGBT 600V 23A 99W TO220

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Infineon Technologies IRGB4610DPBF

IGBT 600V 16A 77W TO220

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Infineon Technologies IRGB4607DPBF

IGBT 600V 11A 58W TO220

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Infineon Technologies IRG7PK35UD1PBF

IGBT 1400V 40A 167W TO247AC

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Infineon Technologies IRG7PK35UD1-EPBF

IGBT 1400V 40A 167W TO247AD

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Infineon Technologies IRG7PH35UD1-EP

IGBT 1200V 50A 179W TO247

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Infineon Technologies IRG7PH28UEF

IGBT 1200V 15A TO247

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