Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

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Infineon Technologies BFP183E7764HTSA1

RF TRANS NPN 12V 8GHZ SOT143-4

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Infineon Technologies BFR181WH6327XTSA1

RF TRANS NPN 12V 8GHZ SOT323-3

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ON Semiconductor MMBT5179

RF TRANS NPN 12V 2GHZ SOT23-3

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ON Semiconductor MMBT918LT1G

RF TRANS NPN 15V 600MHZ SOT23-3

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ON Semiconductor MMBTH81

RF TRANS PNP 20V 600MHZ SOT23-3

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ON Semiconductor MMBTH10-4LT1G

RF TRANS NPN 25V 800MHZ SOT23-3

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ON Semiconductor MMBTH10LT1G

RF TRANS NPN 25V 650MHZ SOT23-3

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ON Semiconductor KST10MTF

RF TRANS NPN 25V 650MHZ SOT23-3

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