IGBT Modules

Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.

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Microsemi Corporation APTGT75H60T2G

POWER MOD IGBT3 FULL BRIDGE SP2

50.67

Infineon Technologies DF200R12W1H3B27BOMA1

IGBT MODULE VCES 1200V 200A

50.67

Microsemi Corporation APTGT100BB60T3G

POWER MOD IGBT3 BOOST BUCK SP3

50.54

Microsemi Corporation APTGLQ40HR120CT3G

PWR MOD PHASE LEG/DUAL CE SP3F

50.45

Microsemi Corporation APTGLQ50H65T3G

POWER MODULE - IGBT

50.39

Microsemi Corporation APTGTQ100A65T1G

POWER MODULE - IGBT

50.29

IXYS MWI45-12T6K

MOD IGBT SIXPACK RBSOA 1200V E1

49.52

Vishay / Semiconductor - Diodes Division VS-100MT060WSP

IGBT

49.41