IGBT Modules

Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.

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Microsemi Corporation APTGT50TL60T3G

MOD IGBT 600V 80A SP3

51.43

Infineon Technologies FF100R12RT4HOSA1

IGBT MODULE VCES 1700V 1000A

51.37

Microsemi Corporation APTGLQ50H65T1G

POWER MODULE - IGBT

51.37

Microsemi Corporation APTGLQ100A65T1G

PWR MOD IGBT4 650V 200A SP1

51.37

IXYS MIXA61H1200ED

IGBT MODULE 1200V 60A

51.29

IXYS IXBN75N170A

IC TRANS BIPO 1700V SOT-227

51.21

Infineon Technologies DF150R12RT4HOSA1

IGBT MODULE VCES 1200V 150A

51.08

IXYS MII75-12A3

MOD IGBT RBSOA 1200V 90A Y4-M5

51.06