IGBT Modules

Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.

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Microsemi Corporation APTGT50H60RT3G

POWER MOD IGBT3 FULL BRIDGE SP3

52.82

IXYS MWI60-12T6K

MOD IGBT SIXPACK RBSOA 1200V E1

52.67

Microsemi Corporation APTGT50SK120TG

IGBT 1200V 75A 277W SP4

52.45

Microsemi Corporation APTGT50DA120TG

IGBT 1200V 75A 277W SP4

52.45

IXYS MIXA20WB1200TED

IGBT MODULE 1200V 20A HEX

52.22

Vishay / Semiconductor - Diodes Division VS-25MT060WFAPBF

IGBT 600V 69A 195W MTP

52.13

IXYS MIXA10WB1200TED

IGBT MODULE 1200V 12A HEX

52.04

Infineon Technologies F3L100R07W2E3B11BOMA1

IGBT MODULE VCES 600V 200A

51.73