IGBT Modules

Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.

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Microsemi Corporation APTGF90SK60TG

IGBT 600V 110A 416W SP4

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Microsemi Corporation APTGF90SK60T1G

IGBT 600V 110A 416W SP1

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Microsemi Corporation APTGT150DA120D1G

IGBT 1200V 220A 700W D1

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Microsemi Corporation APTGT150A60TG

IGBT MODULE TRENCH PHASE LEG SP4

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Microsemi Corporation APTGT150A170G

IGBT MODULE TRENCH PHASE LEG SP6

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Microsemi Corporation APTGT25H120T1G

IGBT MOD TRENCH FULL BRIDGE SP1

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Microsemi Corporation APTGT25DA120D1G

IGBT 1200V 40A 140W D1

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Microsemi Corporation APTGT25A120T1G

IGBT MODULE TRENCH PHASE LEG SP1

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