Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.


Infineon Technologies IRG4BC20KD-STRR

IGBT 600V 16A 60W D2PAK

0

Infineon Technologies IRG4BC20F-S

IGBT 600V 16A 60W TO220-3

0

IXYS IXGX50N60AU1

IGBT 600V 75A 300W TO247

0

IXYS IXGK50N60B

IGBT 600V 75A 300W TO264

0

IXYS IXSH35N100A

IGBT 1000V 70A 300W TO247AD

0

IXYS IXGH25N100A

IGBT 1000V 50A 200W TO247AD

0

IXYS IXER35N120D1

IGBT 1200V 50A 200W TO247

0

Infineon Technologies SGP30N60XKSA1

IGBT 600V 41A 250W TO263

0