Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies BUP213

IGBT 1200V 32A 200W TO220

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Infineon Technologies IRG4CC50UB

IGBT DIE

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Infineon Technologies IRGB6B60KPBF

IGBT 600V 13A 90W TO220AB

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Infineon Technologies IRGB4B60KPBF

IGBT 600V 12A 63W TO220A

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IXYS IXGH60N60

IGBT 600V 75A 300W TO247AD

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Infineon Technologies IRG4PC40KPBF

IGBT 600V 42A 160W TO247AC

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Infineon Technologies IRG4PC40UPBF

IGBT 600V 40A 160W TO247AC

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Infineon Technologies IRG4PC30KPBF

IGBT 600V 28A 100W TO247AC

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