Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IRG4BC30U-SPBF

IGBT 600V 23A 100W D2PAK

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Infineon Technologies IRG4BC30S-SPBF

IGBT 600V 34A 100W D2PAK

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Infineon Technologies IRG4BC30FPBF

IGBT 600V 31A 100W TO220AB

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Infineon Technologies IRG4BC20SDPBF

IGBT 600V 19A 60W TO220AB

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ON Semiconductor FGH30N6S2D

IGBT 600V 45A 167W TO247

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ON Semiconductor FGH20N6S2

IGBT 600V 28A 125W TO247

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ON Semiconductor FGH20N6S2D

IGBT 600V 28A 125W TO247

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ON Semiconductor FGB30N6S2

IGBT 600V 45A 167W TO263AB

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