Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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ON Semiconductor FGB30N6S2DT

IGBT 600V 45A 167W TO263AB

0

ON Semiconductor FGB40N6S2T

IGBT 600V 75A 290W TO263AB

0

STMicroelectronics STGD3NB60HDT4

IGBT 600V 10A 50W DPAK

0

STMicroelectronics STGB7NB60KDT4

IGBT 600V 14A 80W D2PAK

0

STMicroelectronics STGB3NB60SDT4

IGBT 600V 6A 70W D2PAK

0

STMicroelectronics STGB3NB60KDT4

IGBT 600V 10A 50W D2PAK

0

ON Semiconductor SGS5N60RUFDTU

IGBT 600V 8A 35W TO220F

0

ON Semiconductor HGTD3N60C3S9A

IGBT 600V 6A 33W TO252AA

0