Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IRG8CH15K10F

IGBT 1200V ULTRA FAST DIE

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Infineon Technologies IRG8CH15K10D

IGBT 1200V ULTRA FAST DIE

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Infineon Technologies IRG8CH10K10F

IGBT 1200V 5A DIE

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Infineon Technologies IRG8CH106K10F

IGBT 1200V 110A DIE

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Infineon Technologies IRG7PK42UD1PBF

IGBT 1200V DIE

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Infineon Technologies IRG7PK42UD1MPBF

IGBT 1200V DIE

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Infineon Technologies IRG7PK42UD1-EPBF

IGBT 1200V ULTRA FAST TO247

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Infineon Technologies IRG7PH35U-EPBF

IGBT 1200V ULTRA FAST TO247

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