IGBT Modules

Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.

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Microsemi Corporation APTGT75H60T3G

IGBT MOD TRENCH FULL BRIDGE SP3

55.16

Microsemi Corporation APTGT35H120T3G

IGBT MOD TRENCH FULL BRIDGE SP3

54.71

Infineon Technologies FP15R12KT3BOSA1

IGBT MODULE VCES 600V 22A

54.66

IXYS MIXA30W1200TED

IGBT MODULE 1200V 30A

54.65

Microsemi Corporation APTGT150A60T1G

IGBT PHASE LEG 600V 225A SP1

54.6

Microsemi Corporation APTCV40H60CT1G

IGBT TRENCH FULL BRIDGE SP1

54.48

Microsemi Corporation APTGV50H60BT3G

MOD IGBT NPT 600V SP3

54.33

Infineon Technologies F3L15R12W2H3B27BOMA1

IGBT MODULE VCES 1200V 15A

54.27